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Electronic structure and optical property of p-type Zn-doped SnO2 with Sn vacancy

Sun Guipeng Yan Jinliang Niu Peijiang Meng Delan

半导体学报（英文版）2016，Vol.37Issue(2)：39-44,6.

半导体学报（英文版）2016，Vol.37Issue(2)：39-44,6.DOI:10.1088/1674-4926/37/2/023005

Electronic structure and optical property of p-type Zn-doped SnO2 with Sn vacancy

Sun Guipeng ¹Yan Jinliang ¹Niu Peijiang ¹Meng Delan¹

作者信息

1. School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China
折叠

摘要

关键词

SnO2 crystal/zinc doping/tin vacancy/electronic structure/optical property

Key words

SnO2 crystal/zinc doping/tin vacancy/electronic structure/optical property

引用本文复制引用

Sun Guipeng,Yan Jinliang,Niu Peijiang,Meng Delan..Electronic structure and optical property of p-type Zn-doped SnO2 with Sn vacancy[J].半导体学报（英文版）,2016,37(2):39-44,6.

基金项目

Project supported by the National Natural Science Foundation of China (No.10974077) and the Innovation Project of Shandong Graduate Education, China (No.SDYY13093). （No.10974077）

半导体学报（英文版）

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ISSN：1674-4926

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