首页|期刊导航|半导体学报（英文版）|A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

Liu Chaowen Xu Jingping Liu Lu Lu Hanhan Huang Yuan

半导体学报（英文版）2016，Vol.37Issue(2)：71-76,6.

半导体学报（英文版）2016，Vol.37Issue(2)：71-76,6.DOI:10.1088/1674-4926/37/2/024004

A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

Liu Chaowen ¹Xu Jingping ¹Liu Lu ¹Lu Hanhan ¹Huang Yuan¹

作者信息

1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
折叠

摘要

关键词

GaAs MOSFET/threshold voltage/stack high-k gate dielectric/quantum effect

Key words

GaAs MOSFET/threshold voltage/stack high-k gate dielectric/quantum effect

引用本文复制引用

Liu Chaowen,Xu Jingping,Liu Lu,Lu Hanhan,Huang Yuan..A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric[J].半导体学报（英文版）,2016,37(2):71-76,6.

基金项目

Project supported by the National Natural Science Foundation of China (No.61176100). （No.61176100）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航