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Characterization of the effects of nitrogen and hydrogen passivation on SiO2/4H-SiC interface by low temperature conductance measurements

Wang Yiyu Peng Zhaoyang Shen Huajun Li Chengzhan Wu Jia Tang Yachao Zhao Yanli

半导体学报（英文版）2016，Vol.37Issue(2)：148-154,7.

半导体学报（英文版）2016，Vol.37Issue(2)：148-154,7.DOI:10.1088/1674-4926/37/2/026001

Characterization of the effects of nitrogen and hydrogen passivation on SiO2/4H-SiC interface by low temperature conductance measurements

Wang Yiyu ¹Peng Zhaoyang ²Shen Huajun ¹Li Chengzhan ¹Wu Jia ²Tang Yachao ²Zhao Yanli¹

作者信息

1. Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2. Zhuzhou CSR Times Electric Co., Ltd, Zhuzhou 412001, China
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摘要

关键词

SiO2/SiC interface/NO annealing/forming gas annealing/density of interface states

Key words

SiO2/SiC interface/NO annealing/forming gas annealing/density of interface states

引用本文复制引用

Wang Yiyu,Peng Zhaoyang,Shen Huajun,Li Chengzhan,Wu Jia,Tang Yachao,Zhao Yanli..Characterization of the effects of nitrogen and hydrogen passivation on SiO2/4H-SiC interface by low temperature conductance measurements[J].半导体学报（英文版）,2016,37(2):148-154,7.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61106080, 61275042) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (No.2013ZX02305). （Nos.61106080, 61275042）

半导体学报（英文版）

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ISSN：1674-4926

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