电子器件Issue(6)：1249-1252,4.DOI:10.3969/j.issn.1005-9490.2015.06.008
GaAlAs红外发光二极管低频噪声检测方法
Method of Lowfrequency Noise Measurement for GaAlAs IREDs
摘要
Abstract
By analyzing the low frequency noise mechanism and characteristics of the GaAlAs infrared light-emit⁃ting diode(IRED),the noise model of GaAlAs IRED is established,a set of measurement systems of the low fre⁃quency noise is designed,and low-frequency noise of GaAlAs IRED is obtained by the measurement system. Experi⁃mental results show that the method can accurately measure low-frequency noise of GaAlAs IRED,and find out that the low-frequency noise is mainly for 1/f noise. The noise model is consistent with the results. The work done above provides an experimental and theoretical basis for low-frequency noise to be used in characterizing reliability of GaAlAs IREDs.关键词
低频噪声/红外发光二极管/噪声模型/氧化层陷阱Key words
low-frequency noise/IRED/noise model/oxide traps分类
信息技术与安全科学引用本文复制引用
熊建国,赵华,黄贻培,杨代强,陈志高..GaAlAs红外发光二极管低频噪声检测方法[J].电子器件,2015,(6):1249-1252,4.基金项目
中国地震局地震研究所基金项目（IS20136001）；重庆市高等教育教学改革研究重点项目（132018）。 （）
