物理学报Issue(1)：016802-1-016802-6,6.DOI:10.7498/aps.65.016802
掺Fe高阻GaN缓冲层特性及其对AlGaN/GaN高电子迁移率晶体管器件的影响研究∗
Growths of Fe-dop ed GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices
摘要
Abstract
Fe-doped high-resistivity GaN films and AlGaN/GaN high electron mobility transistor (HEMT) structures have been grown on sapphire substrates by metal organic chemical vapor deposition. The lattice quality, surfaces, sheet resistances and luminescent characteristics of Fe-doped high-resistivity GaN with different Cp2Fe flow rates are studied. It is found that high resistivity can be obtained by Fe impurity introduced Fe3+/2+ deep acceptor level in GaN, which compensates for the background carrier concentration. Meanwhile, Fe impurity can introduce more edge dislocations acting as acceptors, which also compensate for the background carrier concentration to some extent. In a certain range, the sheet resistance of GaN material increases with increasing Cp2Fe flow rate. When the Cp2Fe flow rate is 100 sccm (1 sccm=1 mL/min), the compensation efficiency decreases due to the self-compensation effect, which leads to the fact that the increase of the sheet resistance of GaN material is not obvious. In addition, the compensation for Fe atom at the vacancy of Ga atom can be explained as the result of suppressing yellow luminescence. Although the lattice quality is marginally affected while the Cp2Fe flow rate is 50 sccm, the increase of Cp2Fe flow rate will lead to a deterioration in quality due to the damage to the lattice, which is because more Ga atoms are substituted by Fe atoms. Meanwhile, Fe on the GaN surface reduces the surface mobilities of Ga atoms and promotes a transition from two-dimensional to three-dimensional (3D) GaN growth, which is confirmed by atomic force microscope measurements of RMS roughness with increasing Cp2Fe flow rate. The island generated by the 3D GaN growth will produce additional edge dislocations during the coalescence, resulting in the increase of the full width at half maximum of the X-ray diffraction rocking curve at the GaN (102) plane faster than that at the GaN (002) plane with increasing Cp2Fe flow rate. Therefore, the Cp2Fe flow rate of 75 sccm, which makes the sheet resistance of GaN as high as 1 × 1010 Ω/?, is used to grow AlGaN/GaN HEMT structures with various values of Fe-doped layer thickness, which are processed into devices. All the HEMT devices possess satisfactory turn-off and gate-controlled characteristics. Besides, the increase of Fe-doped layer thickness can improve the breakdown voltage of the HEMT device by 39.3%, without the degradation of the transfer characteristic.关键词
高阻GaN/Fe掺杂/高电子迁移率晶体管/金属有机化合物化学气相沉淀Key words
high-resistivity GaN/Fe-doped/high electron mobility transistor/metal-organic chemical vapor deposition引用本文复制引用
王凯,邢艳辉,韩军,赵康康,郭立建,于保宁,邓旭光,范亚明,张宝顺..掺Fe高阻GaN缓冲层特性及其对AlGaN/GaN高电子迁移率晶体管器件的影响研究∗[J].物理学报,2016,(1):016802-1-016802-6,6.基金项目
国家自然科学基金(批准号:61204011,11204009,61574011)、北京市自然科学基金(批准号:4142005)和北京市教委能力提升项目(批准号：PXM2014_014204_07_000018)资助的课题.* Project supported by the National Natural Science Foundation of China (Grant Nos.61204011,11204009,61574011), the Natural Science Foundation of Beijing, China (Grant No.4142005), and the Scientific Reasearch Fund Project of Municipal Education Commission of Beijing, China (Grant No. PXM2014_014204_07_000018) （批准号:61204011,11204009,61574011）
