电子器件Issue(1)：86-89,4.DOI:10.3969/j.issn.1005-9490.2016.01.018
一种高精度过温保护电路的设计
Design of a High Precision Thermal-Shutdown Circuit
摘要
Abstract
Based on UMC 0.25 μm BCD technology,a high precision thermal-shutdown circuit is proposed. The temperature detection is achieved by using the negative temperature characteristic of transistor’s base-emitter volt⁃age of bandgap reference. The hysteresis temperature is produced by adjusting the ratio of resistance to avoid the phenomenon of thermal oscillation. By simulation and verification with HSPICE,the thermal-shutdown output re⁃verses to shut down the chip when the temperature reaches 130℃,and return to normal working when the tempera⁃ture drops to 99℃. The amount of hysteresis temperature is 31℃. The thermal shutdown threshold and hysteresis temperature have a maximum drift error of only 0.24℃when supply voltage changes.关键词
过温保护/BCD/迟滞/热振荡Key words
thermal-shutdown/BCD/hysteresis/thermal oscillation分类
信息技术与安全科学引用本文复制引用
谭玉麟,冯全源..一种高精度过温保护电路的设计[J].电子器件,2016,(1):86-89,4.基金项目
国家自然科学基金项目（61271090）；四川省科技支撑计划项目 （）
