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High-quality ZnO growth, doping, and polarization effect

Tang Kun Gu Shulin Ye Jiandong Zhu Shunming Zhang Rong Zheng Youdou

半导体学报（英文版）2016，Vol.37Issue(3)：1-13,13.

半导体学报（英文版）2016，Vol.37Issue(3)：1-13,13.DOI:10.1088/1674-4926/37/3/031001

High-quality ZnO growth, doping, and polarization effect

Tang Kun ¹Gu Shulin ¹Ye Jiandong ¹Zhu Shunming ²Zhang Rong ¹Zheng Youdou¹

作者信息

1. School of Electronic Science & Engineering, Nanjing University, Nanjing 210023, China
2. Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009, China
折叠

摘要

关键词

ZnO/homo-and hetero-epitaxy/native defects/p-type doping/tellurium-nitrogen co-doping/ZnMgO/ZnO hetero-structure

Key words

ZnO/homo-and hetero-epitaxy/native defects/p-type doping/tellurium-nitrogen co-doping/ZnMgO/ZnO hetero-structure

引用本文复制引用

Tang Kun,Gu Shulin,Ye Jiandong,Zhu Shunming,Zhang Rong,Zheng Youdou..High-quality ZnO growth, doping, and polarization effect[J].半导体学报（英文版）,2016,37(3):1-13,13.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61025020,61274058,61322403,61504057,61574075),the Natural Science Foundation of Jiangsu Province (Nos.BK2011437,BK20130013,BK20150585),the Priority Academic Program Development of Jiangsu Higher Education Institutions,and the Fundamental Research Funds for the Central Universities. （Nos.61025020,61274058,61322403,61504057,61574075）

半导体学报（英文版）

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ISSN：1674-4926

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