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Small-signal model parameter extraction for AlGaN/GaN HEMT

Yu Le Zheng Yingkui Zhang Sheng Pang Lei Wei Ke Ma Xiaohua

半导体学报(英文版)2016,Vol.37Issue(3):48-52,5.
半导体学报(英文版)2016,Vol.37Issue(3):48-52,5.DOI:10.1088/1674-4926/37/3/034003

Small-signal model parameter extraction for AlGaN/GaN HEMT

Small-signal model parameter extraction for AlGaN/GaN HEMT

Yu Le 1Zheng Yingkui 2Zhang Sheng 2Pang Lei 1Wei Ke 2Ma Xiaohua2

作者信息

  • 1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Advanced Materials and Nanotechnology,Xidian University, Xi'an 710071, China
  • 2. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 折叠

摘要

关键词

AlGaN/GaN HEMT/small-signal/parameter extraction/modeling

Key words

AlGaN/GaN HEMT/small-signal/parameter extraction/modeling

引用本文复制引用

Yu Le,Zheng Yingkui,Zhang Sheng,Pang Lei,Wei Ke,Ma Xiaohua..Small-signal model parameter extraction for AlGaN/GaN HEMT[J].半导体学报(英文版),2016,37(3):48-52,5.

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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