传感技术学报2016，Vol.29Issue(2)：202-207,6.DOI:10.3969/j.issn.1004-1699.2016.02.009
MEMS悬浮结构深反应离子刻蚀保护方法对比研究
Comparison Research on the Protection Methods for MEMS Suspended Structure Deep Reactive Ion Etching
何凯旋 1黄斌 1段宝明 1宋东方 1郭群英1
作者信息
- 1. 华东光电集成器件研究所，安徽蚌埠233042
- 折叠
摘要
Abstract
The protection methods for MEMS suspended structure deep reactive ion etching based on silicon-glass bonding and silicon direct bonding are studied in comparison experiments. The best protection method for process based on silicon-glass bonding is to sputter a metal layer on the backside of the structure. For the process based on silicon direct bonding,the best method is to combine the following two methods of exposing the silicon substrate un⁃der the etching through area and using graphed silicon oxide as protection layer. The structure is still excellent after long time overetch by the protection process.关键词
MEMS/硅玻键合/硅硅键合/深反应离子刻蚀/保护方法Key words
MEMS/Silicon-Glass bonding/Silicon direct bonding/deep reactive ion etching/protection methods分类
信息技术与安全科学引用本文复制引用
何凯旋,黄斌,段宝明,宋东方,郭群英..MEMS悬浮结构深反应离子刻蚀保护方法对比研究[J].传感技术学报,2016,29(2):202-207,6.
