长沙理工大学学报（自然科学版）2016，Vol.13Issue(1)：81-86,6.
不同生长条件对 Sn 掺杂 ZnO 薄膜电学性能的影响
Effect of different growth conditions on the electrical properties of Sn doped ZnO thin films
摘要
Abstract
Sn doped ZnO transparent conductive thin films were prepared on glass substrates by direct reactive magnetron sputtering.The electrical properties of thin films were charac-terized by Hall effect measurement.The effect of different conditions on the electrical prop-erties of thin films was studied.The resistivity decreases and then increases as the Ar/O 2 increases.When the Ar/O 2 is 6,the film has the lowest resistivity of 2.02 × 10 -2 Ω·cm. The resistivity dramatically decreases with the increase of sputtering power,which is the lowest,2.89×10 -2 Ω·cm at 140 W.The lowest resistivity of thin films is 1.45×10 -2 Ω· cm when the sputtering time is 1 1 min.The resistivity of thin films first dramatically de-creases and then increases as the sputtering pressure increases.When the sputtering pres-sure is 0.8 Pa,the lowest resistivity of thin films is 2.17×10 -2 Ω·cm.When the substrate temperature is 475 ℃,the thin films exhibits the best electrical properties,with the lowest resistivity of 2.26×10 -2 Ω·cm.During the whole experiments,the thin film has the best conductivity and the resistivity is 1.45 × 10 -2 Ω· cm,when the ratio of Ar/O 2 is 8,the sputtering power is 180 W,the substrate temperature is 450 ℃,the sputtering pressure is 0.5 Pa,and the sputtering time is 1 1 min.关键词
ZnO/Sn 掺杂/透明导电薄膜/电学性能/磁控溅射Key words
ZnO/Sn doping/transparent conductive thin films/electrical property/magne-tron sputtering分类
数理科学引用本文复制引用
龚丽,刘云珍,吕建国,叶志镇..不同生长条件对 Sn 掺杂 ZnO 薄膜电学性能的影响[J].长沙理工大学学报（自然科学版）,2016,13(1):81-86,6.基金项目
国家自然科学基金资助项目(51302021) （51302021）
湖南省教育厅科研基金项目(13C1025) （13C1025）
