东华大学学报（英文版）2015，Vol.32Issue(6)：1052-1054,3.
Source of Low Frequency Noise in SiGe HBTs
Source of Low Frequency Noise in SiGe HBTs
WANG Kai 1LIU Yuan 2DENG Wan-Ling1
作者信息
- 1. School of Information Science and Technology, Jinan University, Guangzhou 510632, China
- 2. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, CEPREI, Guangzhou 510610,China
- 折叠
摘要
关键词
SiGe/heterojunction bipolar transistors (HBTs)/low frequency noiseKey words
SiGe/heterojunction bipolar transistors (HBTs)/low frequency noise分类
信息技术与安全科学引用本文复制引用
WANG Kai,LIU Yuan,DENG Wan-Ling..Source of Low Frequency Noise in SiGe HBTs[J].东华大学学报（英文版）,2015,32(6):1052-1054,3.
