发光学报2016，Vol.37Issue(3)：332-337,6.DOI:10.3788/fgxb20163703.0332
温度对4管像素结构CMOS图像传感器性能参数的影响
Temperature Effects on Performance Parameters in 4 T CMOS Image Sensor
摘要
Abstract
In order to provide a reliable guidance for the spatial application of the 4 T CMOS image sensor, temperature effects on 4T active pixel sensor CMOS image sensor from -40 ℃ to 80 ℃were presented. The influences of temperature on conversion gain, full well charge, saturated output and dark current of the device were investigated. The experiment results show that the conversion gain of device decreases from 0. 026 54 DN/e to 0. 023 79 DN/e, the saturated output decreases from 4 030 DN to 3 396 DN, and the dark current increases from 22. 9 e·pixel-1 ·s-1 to 649 e· pixel-1 ·s-1 with the temperature increasing. The decrease of conversion gain should be attributed to the decrease of the carrier mobility with the temperature increasing. The decrease of saturation output is mainly because of the decrease of the conversion gain which the influence of the conversion gain on saturated output is greater than that of the full well capacity with the change of temperature.关键词
CMOS图像传感器/转换增益/满阱容量/暗电流/温度Key words
CMOS image sensor/conversion gain/full well charge/dark current/temperature分类
信息技术与安全科学引用本文复制引用
王帆,李豫东,郭旗,汪波,张兴尧..温度对4管像素结构CMOS图像传感器性能参数的影响[J].发光学报,2016,37(3):332-337,6.基金项目
国家自然科学基金（11005152）资助项目 （）
