物理学报2016，Vol.65Issue(3)：038402-1-038402-7,7.DOI:10.7498/aps.65.038402
GaN高电子迁移率晶体管强电磁脉冲损伤效应与机理∗
Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse
摘要
Abstract
As electromagnetic environment of semiconductor device and integrated circuit deteriorates increasingly, electro-magnetic pulse (EMP) of device and damage phenomenon have received more and more attention. In this paper, the damage effect and mechanism of the GaN high electron mobility field effect transistor (HEMT) under EMP are inves-tigated. A two-dimensional electro-thermal theoretical model of GaN HEMT under EMP is proposed, which includes GaN polarization effect, mobility degradation in large electric field, avalanche generation effect, and self-heating effect. The internal transient response of AlGaN/GaN HEMT is analyzed under the EMP injected into the gate electrode, and the damage mechanism is studied. The results show that the temperature of device keeps increasing, and the rate is divided into three stages, which present a tendency of “rapid-slow-sharp” till burn-out. The first rapid increasing of temperature is caused by the avalanche breakdown, and then rate becomes smaller due to the decrease of electric field. As the temperature is more than 2000 K, a positive feedback is formed between the hot electron emission and temper-ature of device, which causes temperature to sharply increase till burn-out. The maximum values of electric field and current density are located at the cylinder surface beneath the gate around the source, which is damage prone because of heat accumulation. Finally, the dependences of the EMP damage power, P , and the absorbed energy, E, on pulse width are obtained in a nanosecond range by adopting the data analysis software. It is demonstrated that the damage power threshold decreases but the energy threshold increases slightly with the increasing of pulse-width. The proposed formulas P =38τ−0.052 and E=1.1τ0.062 can estimate the high power microwave pulse-width dependent damage power threshold and energy threshold of AlGaN/GaN HEMT, which can provide a good prediction of device damage and a guiding significance for electromagnetic pulse resistance destruction.关键词
GaN/高电子迁移率晶体管/强电磁脉冲/损伤机理Key words
GaN/high electron mobility transistor/electromagnetic pulse/mechanism of damage引用本文复制引用
刘阳,柴常春,于新海,樊庆扬,杨银堂,席晓文,刘胜北..GaN高电子迁移率晶体管强电磁脉冲损伤效应与机理∗[J].物理学报,2016,65(3):038402-1-038402-7,7.基金项目
国家重点基础研究发展计划(批准号:2014CB339900)和中国工程物理研究院复杂电磁环境科学与技术重点实验室开放基金(批准号:2015-0214.XY.K)资助的课题.* Project supported by the National Basic Research Program of China (Grant No.2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No.2015-0214.XY.K) （批准号:2014CB339900）
