西北师范大学学报（自然科学版）2016，Vol.52Issue(2)：38-42,5.DOI:10.16783/j.cnki.nwnuz.2016.02.009
ArSiCl4大气压等离子体射流沉积 SiO2薄膜
Deposition of SiO 2 film by using A r/SiCl4 atmospheric pressure plasma jet
摘要
Abstract
SiO2 thin film has been deposited using an atmospheric pressure plasma jet (APPJ) driven by dual‐frequency excitations(50 kHz/33 MHz) with Ar as the carrying gas ,SiCl4 as the source material and oxygen in the air as oxidizing substances . Plasma composition is characterized by optical emission spectroscopy(OES) . The content of SiCl4 and the change of species in the plasma is studied by OES technique . According to the results , the deposition condition is optimized . Morphology and structure of the thin films are characterized by scanning electron microscopy (SEM ) , X‐ray photoelectron spectroscopy (XPS) and Fourier transform infra‐red(FT‐IR) spectroscopy .XPS shows that chemical composition of the thin film is Si , O and a small amount of Cl . FT‐IR points out that the chemical structure of the thin film is mainly Si‐O‐Si and Si‐O H bonds .关键词
大气压等离子体射流/双频激发/SiO2薄膜Key words
atmospheric pressure plasma jet/dual-frequency excitation/SiO2 thin film分类
数理科学引用本文复制引用
袁强华,常小伟,李娇娇,殷桂琴..ArSiCl4大气压等离子体射流沉积 SiO2薄膜[J].西北师范大学学报（自然科学版）,2016,52(2):38-42,5.基金项目
国家自然科学基金资助项目（11165012）；甘肃省自然科学基金资助项目 （）
