原子能科学技术2016，Vol.50Issue(2)：219-226,8.DOI:10.7538/yzk.2016.50.02.0219
3C-SiC辐照诱发缺陷演化及温度效应分子动力学模拟
Molecular Dynamics Simulation of Evolution of Defect and Temperature Effect in Irradiated 3C-SiC
马小强 1袁大庆 1夏海鸿 2范平 1张乔丽 1左走翼 1艾尔肯·阿不列木 3朱升云1
作者信息
- 1. 中国原子能科学研究院核物理研究所，北京 102413
- 2. 国核 北京 科学技术研究院，北京 100029
- 3. 新疆大学物理科学与技术学院，新疆乌鲁木齐 830046
- 折叠
摘要
Abstract
In this paper ,the molecular dynamics method was used to simulate the dis‐placement cascade of 3C‐SiC by using LAMMPS code .The evolution of simulated radia‐tion‐induced point defects by the displacement cascade was studied at different PKA initial directions and energy .The results show that the vacancy number is irrespective with the initial direction of PKA ,and the linear relationship exists between the vacancy number and PKA energy .The variations of the transient temperature distribution and thermal spikes were investigated during displacement cascade .Through analysis ,a high temperature region produces during displacement cascade .T he size of this region chan‐ging with time is not dependent on the PKA energy .关键词
3C-SiC/分子动力学/级联碰撞/缺陷/温度效应Key words
3C-SiC/molecular dynamics/displacement cascade/defect/temperature effect分类
能源科技引用本文复制引用
马小强,袁大庆,夏海鸿,范平,张乔丽,左走翼,艾尔肯·阿不列木,朱升云..3C-SiC辐照诱发缺陷演化及温度效应分子动力学模拟[J].原子能科学技术,2016,50(2):219-226,8.
