东南大学学报（自然科学版）2016，Vol.46Issue(2)：255-259,5.DOI:10.3969/j.issn.1001-0505.2016.02.005
功率 LIGBT 热载流子退化机理及环境温度影响
Hot-carrier degradation mechanism and influence of ambient temperature for power LIGBT
摘要
Abstract
The mechanism of hot-carrier degradation for lateral insulated gate bipolar transistor (LIGBT) and the influence of ambient temperature are investigated.The results indicate that the main degradation mechanism is the generation of a large number of interface states at the beak of LIGBT, which leads to the large decreases of the saturation-region anode current Iasat and the linear-region anode current Ialin.Meanwhile, the distribution of Ialin is much closer to the device surface comparing with that of Iasat , so the degradation of Ialin is more serious than that of Iasat .In the channel region, the impact ionization and the hot carrier damage are tiny;as a result, the threshold voltage Vth remains constant before and after the stress.Moreover, the influence of ambient temperature on the hot carrier degradation of LIGBT is also investigated.LIGBT shows positive temperature coeffi-cient, and the decreased threshold voltage under the high temperature condition induces the increase of the current of LIGBT under the same stress, which leads to the increase of impact ionization. Thus, finally enhanceing the hot-carrier damage of LIGBT.关键词
横向绝缘栅双极型晶体管/环境温度/热载流子效应/退化Key words
lateral insulated gate bipolar transistor ( LIGBT )/ambient temperature/hot-carrier effect/degradation分类
信息技术与安全科学引用本文复制引用
张艺,张春伟,刘斯扬,周雷雷,孙伟锋..功率 LIGBT 热载流子退化机理及环境温度影响[J].东南大学学报（自然科学版）,2016,46(2):255-259,5.基金项目
国家自然科学基金资助项目（61204083）、江苏省杰出青年基金资助项目（ BK20130021）、港澳台科技合作专项资助项目（2014DFH10190）、江苏省“青蓝工程”资助项目、中央高校基本科研业务费专项资金资助项目、江苏省普通高校研究生科研创新计划资助项目（SJLX-0076）． （）
