机电工程技术2016，Vol.45Issue(3)：20-23,4.DOI:10.3969/j.issn.1009-9492.2016.03.005
第三代半导体材料SiC晶体生长设备技术及进展
Review on Technology of Growth Equipment for the Third Generation Semiconductor-SiC Crystal
摘要
Abstract
The third generation semiconductor equipment technologies are important base supporting the developments of the third generation semiconductor technologies . The third generation semiconductor is briefly introduced using SiC as the representative in this paper. The technologies of SiC crystal growth , equipment, and the domestic and foreign developments are mainly reviewed. In the end, it is pointed out that the synergetic development of the equipment and the growth technique of SiC crystal growth equipment is important.关键词
第三代半导体/SiC晶体/SiC晶体生长设备/SiC晶体生长工艺Key words
the third generation semiconductor/SiC crystal/SiC crystal growth furnace/SiC crystal growth process分类
信息技术与安全科学引用本文复制引用
郑泰山,阮毅,王寅飞..第三代半导体材料SiC晶体生长设备技术及进展[J].机电工程技术,2016,45(3):20-23,4.基金项目
广东省科技计划资助项目 （）
