聊城大学学报（自然科学版）2016，Vol.29Issue(1)：23-27,5.
全薄膜电致变色器件gIass／ITO／NiOx／ZrO2∶H／WO3／ITO中单层膜的表征及器件的光学性能
Characterization of SingIe Layers in AII-thin-fiIm EIectrochromic Device (gIass/ITO/NiOx/ZrO2：H/WO3/ITO) and OpticaI Performance of Device
摘要
Abstract
All‐thin‐film electrochriomic device with structure of glass/ITO/NiOx/ZrO2 :H/WO3/ITO was prepared by continuous magnetron sputtering .Morphology ,crystal structure and elemental composition of NiOx ,ZrO2 :H and WO3 which play important roles in the device were presented .The results show that small pores are conductive to the extraction and injection of H + exist in NiOx surface . Rough surface and smaller particle size were found on the surfaces of ZrO 2 :H and WO3 films .Both ZrO2 :H and WO3 have amorphous structure ,while NiOx presents cubic microcrystalline .Optical per‐formance and cycle life of the device was investigated using visible transmission spectrum .Although col‐oring responded much slowly after 60000 cycles ,the bleaching response was fairly constant and visible transmittance modulation of the device still remained high at 57 .9% .T he results indicated that the de‐vice has excellent electrochromic performance and durability ,and preliminary meets the requirement of commercial application .关键词
磁控溅射/全薄膜电致变色器件/透过率Key words
magnetron sputtering/all-thin-film electrochromic device/transmittance分类
能源科技引用本文复制引用
宋兴旺,董国波,刘齐荣,刁训刚..全薄膜电致变色器件gIass／ITO／NiOx／ZrO2∶H／WO3／ITO中单层膜的表征及器件的光学性能[J].聊城大学学报（自然科学版）,2016,29(1):23-27,5.基金项目
北京高等学校青年英才计划项目（YETP1139）资助 （）
