空间电子技术2016，Vol.13Issue(1)：35-37,72,4.DOI:10.3969/j.issn.1674-7135.2016.01.008
矩形槽二次电子产额的解析模型
Analytical Models of the Secondary Electron Yield from the Material Surface with Rectangular Grooves
摘要
Abstract
Secondary electrons emission phenomenon is the basis and key point in the field of physical electronics for its influence on the modern analysis instruments and microwave devices. Surface topography plays an important role in seconda-ry electron emission. Until now, there is still lack of an analytical model for the relationship between secondary electron yield ( SEY) and surface topography. Rectangular grooves which can sharply decrease the secondary electron yield, is wide-ly used in the accelerator and high power microwave source. In this paper, the shielding effect of the surface structure is considered to be the main factor that affects SEY characteristics. And the analytical model is deduced to describe the quanti-tative relationship between the SEY and rectangular grooves parameters. The results calculated by the analytical model agree with the Monte Carlo simulation results and experiment data.关键词
二次电子发射/二次电子产额( SEY)/解析模型/矩形槽Key words
Secondary electron emission/Secondary Electron Yield ( SEY)/Analytical model/Rectangular grooves引用本文复制引用
张娜,崔万照,胡天存,王瑞,李韵,王新波..矩形槽二次电子产额的解析模型[J].空间电子技术,2016,13(1):35-37,72,4.基金项目
重点实验室基金(编号:9140C530101150C53011、9140C530101130C53013、9140C530101140C53231)。 （编号:9140C530101150C53011、9140C530101130C53013、9140C530101140C53231）
