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氢离子辐照纯钒中形成的位错环∗

崔丽娟 高进 杜玉峰 张高伟 张磊 龙毅 杨善武 詹倩 万发荣

物理学报2016,Vol.65Issue(6):248-254,7.
物理学报2016,Vol.65Issue(6):248-254,7.DOI:10.7498/aps.65.066102

氢离子辐照纯钒中形成的位错环∗

Characterization of dislo cation lo ops in hydrogen-ion irradiated vanadium

崔丽娟 1高进 1杜玉峰 1张高伟 1张磊 1龙毅 1杨善武 1詹倩 1万发荣1

作者信息

  • 1. 北京科技大学材料科学与工程学院材料物理与化学系,北京 100083
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摘要

Abstract

Vanadium alloys are considered as the candidate materials for structure application in fusion reactors because of their low radiation-induced activation, high resistance to radiation damage, high thermal conduction, and low thermal expansion coefficient. Before these materials, which will be exposed to high-flux hydrogen and helium isotopes, may be safely used in fusion device much more data based on irradiation damage are required. The study of dislocation loops in vanadium is designed to indicate the mechanism of void growing under irradiation. The mechanism is that different types of dislocation loops have different bias which represent their abilities to absorb point defects. It is possible to explain the irradiation swelling performance in the material with the bias of loops. The thin disks samples used in this experiment are made of pure vanadium and vanadium alloy (V-4Cr-4Ti) by twin-jet electro-polishing. Electrolyte of H2SO4-CH3OH (1:6 by volume) at−20 ◦C is used in a current of 80–120 mA. To get a clear view of dislocation loops, the SRIM code is used to simulate the implantation of hydrogen ions into vanadium. The ion irradiation is carried out to a dose of 5 × 1016 H+/cm2, at an energy of 30 keV. Microstructure observations are performed on a Tecnai G2 F20 (transmission electron microscope, TEM) at an accelerating voltage of 200 kV. The Burger’s vectors and nature of the dislocation loops formed in pure vanadium by hydrogen implantation are confirmed by TEM. This experiment has focused on as many as 76 dislocation loops, lots of images are taken under different diffraction conditions from the same areas of interest. Results show that most of the dislocation loops have a Burger’s vectors of 1/2⟨111⟩ (> 90%), and a few of ⟨110⟩. No loops with b=⟨100⟩ loops can be found in this study. The nature of dislocation loops is determined by the inside-outside method. The number of the dislocation loops that can make sure of their nature is 29, and all of them are conformed to be interstitial type, their habit planes are from{110}to{112}. No vacancy type loops are found. The density and average size of dislocation loops in vanadium and vanadium alloy are also analysed. Compared with the pure vanadium, the loops in vanadium alloy of V-4Cr-Ti are formed in a smaller size and higher number density. As a future work the difference of the loops nature between pure vanadium and vanadium-based alloys should be investigated to illustrate their behaviour of irradiation swelling.

关键词

/透射电镜/位错环/

Key words

vanadium/transmission electron microscopy/dislocation loops/hydrogen

引用本文复制引用

崔丽娟,高进,杜玉峰,张高伟,张磊,龙毅,杨善武,詹倩,万发荣..氢离子辐照纯钒中形成的位错环∗[J].物理学报,2016,65(6):248-254,7.

基金项目

国家自然科学基金(批准号:51071021,51471026)和国家磁约束核聚变发展专项资助项目(批准号:2014GB120000)资助的课题.* Project supported by the National Natural Science Foundation of China (Grant Nos.51071021,51471026), and the National Magnetic Confinement Fusion Program of China (Grant No.2014GB120000) (批准号:51071021,51471026)

物理学报

OA北大核心CSCDCSTPCDSCI

1000-3290

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