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基于量子点和MEH-PPV的白光发光二极管的研究∗

孙立志 赵谡玲 徐征 尹慧丽 张成文 龙志娟 洪晓 霞王鹏 徐叙瑢

物理学报2016,Vol.65Issue(6):297-302,6.
物理学报2016,Vol.65Issue(6):297-302,6.DOI:10.7498/aps.65.067301

基于量子点和MEH-PPV的白光发光二极管的研究∗

White light emitting dio de based on quantum dots and MEH-PPV

孙立志 1赵谡玲 1徐征 1尹慧丽 1张成文 1龙志娟 1洪晓 1霞王鹏 1徐叙瑢1

作者信息

  • 1. 北京交通大学光电子技术研究所,发光与光信息教育部重点实验室,北京 100044
  • 折叠

摘要

Abstract

The white light emitting diode (LED) devices, in which blue-emitting quantum dots doped in the polymer of poly [2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylene vinylene] (MEH-PPV) serve as the active layer, have been fabricated in a nitrogen-filled glove box; the devices have the structure of ITO/PEDOT/MEH-PPV:QDs(B)/LiF/Al. After a systematical investigation, we report the effect of different quantum dots (QDs) doping concentration (mass fraction) on the electroluminescent spectrum, current density, brightness, CIE coordinates of the devices and atomic force microscopy (AFM) characterizations of the emitting layer. With the increase of QDs doping concentration, we find that the QDs luminance intensity of the controlling devices continues to grow. When the QDs doping concentration is 40%, the normal white light emission is obtained in the devices. The CIE coordinates of the white QD-LED are (0.35, 0.32), which are close to the balanced white coordinates. Besides, we also fabricate the non-doped devices, in which the structure is ITO/PEDOT/MEH-PPV/QDs(B)/LiF/Al. After finishing the active layer’s preparation, the morphology of the films are investigated by AFM. By comparing the analysis, the doped system has a lower level on the root mean squared roughness. In addition, the doped devices demonstrate a superior performance, and exhibit a low turn-on voltage and a high maximum value of luminance.

关键词

量子点/MEH-PPV/白光/掺杂

Key words

quantum dots/MEH-PPV/white light/dope

引用本文复制引用

孙立志,赵谡玲,徐征,尹慧丽,张成文,龙志娟,洪晓,霞王鹏,徐叙瑢..基于量子点和MEH-PPV的白光发光二极管的研究∗[J].物理学报,2016,65(6):297-302,6.

基金项目

国家高技术研究发展计划(批准号:2013AA032205)、国家自然科学基金(批准号:11474018,51272022,61575019)、高等学校博士学科点专项科研基金(批准号:20130009130001,20120009130005)和深圳市华星光电技术有限公司技术开发合同(合同编号:HETONG-150188-04E008)资助的课题.* Project supported by the National High Technology Research and Development Program of China (Grant No.2013AA032205), the National Natural Science Foundation of China (Grant Nos.11474018,51272022,61575019), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant Nos.20120009130005,20130009130001), and the Technological Development Contract (csot)(Grant No. HETONG-150188-04E008) (批准号:2013AA032205)

物理学报

OA北大核心CSCDCSTPCDSCI

1000-3290

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