半导体学报（英文版）2016，Vol.37Issue(4)：32-38,7.DOI:10.1088/1674-4926/37/4/044001
Characteristic diode parameters in thermally annealed Ni/p-InP contacts
Characteristic diode parameters in thermally annealed Ni/p-InP contacts
A.Turut 1K.Ejderha 2N.Yildirim 3B.Abay4
作者信息
- 1. Istanbul Medeniyet University, Faculty of Sciences, Department of Engineering Physics, 34720 Istanbul, Turkey
- 2. Department of Electricity and Energy, Vocational High School of Technical Sciences, Bingol University, 12000 Bing(o)l, Turkey
- 3. Bing(o)l University, Faculty of Sciences and Arts, Department of Physics, 12000 Bing(o)l, Turkey
- 4. Department of Physics, Faculty of Sciences and Arts, Ataturk University, 25240 Erzurum, Turkey
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摘要
关键词
Ni/p-InP/Schottky diodes/Gaussian distributionKey words
Ni/p-InP/Schottky diodes/Gaussian distribution引用本文复制引用
A.Turut,K.Ejderha,N.Yildirim,B.Abay..Characteristic diode parameters in thermally annealed Ni/p-InP contacts[J].半导体学报（英文版）,2016,37(4):32-38,7.
