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A physical model of hole mobility for germanium-on-insulator pMOSFETs

Yuan Wenyu Xu Jingping Liu Lu Huang Yong Cheng Zhixiang

半导体学报（英文版）2016，Vol.37Issue(4)：50-56,7.

半导体学报（英文版）2016，Vol.37Issue(4)：50-56,7.DOI:10.1088/1674-4926/37/4/044004

A physical model of hole mobility for germanium-on-insulator pMOSFETs

Yuan Wenyu ¹Xu Jingping ¹Liu Lu ¹Huang Yong ¹Cheng Zhixiang¹

作者信息

1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
折叠

摘要

关键词

GeOI/pMOSFETs/hole mobility/scattering mechanisms

Key words

GeOI/pMOSFETs/hole mobility/scattering mechanisms

引用本文复制引用

Yuan Wenyu,Xu Jingping,Liu Lu,Huang Yong,Cheng Zhixiang..A physical model of hole mobility for germanium-on-insulator pMOSFETs[J].半导体学报（英文版）,2016,37(4):50-56,7.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61274112,61176100,61404055). （Nos.61274112,61176100,61404055）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

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