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A sensitive charge scanning probe based on silicon single electron transistor

Su Lina Li Xinxing Qin Hua Gu Xiaofeng

半导体学报（英文版）2016，Vol.37Issue(4)：73-76,4.

半导体学报（英文版）2016，Vol.37Issue(4)：73-76,4.DOI:10.1088/1674-4926/37/4/044008

A sensitive charge scanning probe based on silicon single electron transistor

Su Lina ¹Li Xinxing ²Qin Hua ²Gu Xiaofeng²

作者信息

1. Engineering Research Center of IoT Technology Applications(Ministry of Education), Department of Electronic Engineering,Jiangnan University, Wuxi 214122, China
2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
折叠

摘要

关键词

single electron transistor/scanning Probe/silicon-on-insulator/Coulomb blockade/charge detection

Key words

single electron transistor/scanning Probe/silicon-on-insulator/Coulomb blockade/charge detection

引用本文复制引用

Su Lina,Li Xinxing,Qin Hua,Gu Xiaofeng..A sensitive charge scanning probe based on silicon single electron transistor[J].半导体学报（英文版）,2016,37(4):73-76,4.

基金项目

Project supported by the Instrument Developing Project of the Chinese Academy of Sciences (No.YZ201152),the National Natural Science Foundation of China (No.11403084),the Fundamental Research Funds for Central Universities (Nos.JUSRP51510,JUDCF12032),and the Graduate Student Innovation Program for Universities of Jiangsu Province (No.CXLX12_0724). （No.YZ201152）

半导体学报（英文版）

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ISSN：1674-4926

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