电子器件2016，Vol.39Issue(2)：264-269,6.DOI:10.3969/j.issn.1005-9490.2016.03.006
Bi-Mode逆导门极换流晶闸管工艺方案与版图设计
Bi-Mode Reverse Conducting Gate Commutated Thyristor Technology Programs and Layout
谭巍 1李建清1
作者信息
- 1. 电子科技大学物理电子学院，成都610054
- 折叠
摘要
Abstract
Bi-mode reverse conducting gate commutated thyristors(BGCT)is to improve the traditional reverse conducting gate commutated thyristors(RC-GCT)current uniform and improve the utilization of the effective area of the wafer proposed a new structure. The main feature is the map layout in which the diode anode and cathode refers to Article interludes together GCT. Based on the BGCT device structure analysis ,a fabrication scheme is given by using Sentaurus TCAD software to verify the feasibility of the technology program. The analysis results show that the process design is feasible,the device structure parameters fit in line with the objectives and requirements;and finally process scheme is determined based on the cathode,by means of the gate design its territory layout program is giv⁃en,and with L-edit software its lithography processes can map out.关键词
电力电子器件/门极换流晶闸管/工艺方案/版图布局/TCADKey words
power electronic device/gate commutated thyristor/craft programs/layout/TCAD分类
数理科学引用本文复制引用
谭巍,李建清..Bi-Mode逆导门极换流晶闸管工艺方案与版图设计[J].电子器件,2016,39(2):264-269,6.
