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Buck电路IGBT老化失效的特征分析

姜志鹏 阎浩 杨娟

现代电子技术2016,Vol.39Issue(8):126-129,4.
现代电子技术2016,Vol.39Issue(8):126-129,4.DOI:10.16652/j.issn.1004-373x.2016.08.033

Buck电路IGBT老化失效的特征分析

Feature analysis on aging failure of IGBT in Buck circuit

姜志鹏 1阎浩 1杨娟1

作者信息

  • 1. 金陵科技学院 电子信息工程学院,江苏 南京 211169
  • 折叠

摘要

Abstract

The insulated gate bipolar transistor (IGBT) is common used in the motor control system of automobile and train,and switching mode power supply of aerospace equipment. The IGBT failure can reduce the system efficiency,or even di⁃rectly results in system failure. The variation of circuit characteristic parameter caused by IGBT failure is identified and moni⁃tored to effectively predict and avoid the failure. To study whether IGBT aging can influence on the circuit output characteris⁃tics,the Buck circuit is taken as the research object to design the Buck circuit convenient for replacing IGBT under large cur⁃rent condition. The heat stress aging test for IGBT was performed and then the aged IGBT was obtained. The aged IGBT was in⁃troduced into the designed Buck circuit to analyze its influence on output voltage of Buck circuit. The conclusion that the aged IGBT can increase the output voltage average value of Buck circuit and amplitude of high⁃frequency noise wave is obtained, which provides some extractable feature parameters for IGBT aging detection and nascent fault diagnosis of the circuit.

关键词

IGBT/Buck电路/老化失效/特征分析

Key words

IGBT/Buck circuit/aging failure/feature analysis

分类

信息技术与安全科学

引用本文复制引用

姜志鹏,阎浩,杨娟..Buck电路IGBT老化失效的特征分析[J].现代电子技术,2016,39(8):126-129,4.

基金项目

江苏省教育厅项目(13kjd520004);国家青年科学基金项目(61302167);金陵科技学院教改项目(2015JYJG22);金陵科技学院科研基金项目 ()

现代电子技术

OA北大核心CSTPCD

1004-373X

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