发光学报2016，Vol.37Issue(4)：428-431,4.DOI:10.3788/fgxb20163704.0428
GaAs半导体表面的等离子氮钝化特性研究
Nitrogen-plasma Passivation of GaAs Semiconductor Surface
摘要
Abstract
GaAs substrate was treated by N+ with 150 W RF plasma and followed by rapid thermal annealing. The PL intensity increased by 91%. XPS analysis indicates that GaAs surface has been nitrided after high power RF N+ plasma processing, and the nitridation effect is enhanced under higher RF power. No oxide is found on nitrided GaAs surface. The prepared samples were kept on heat plate in open air for PL stability evaluation, little drop was found during a 30 days test.关键词
等离子/XPS/PL/GaAsKey words
plasma/XPS/PL/GaAs分类
信息技术与安全科学引用本文复制引用
许留洋,高欣,袁绪泽,夏晓宇,曹曦文,乔忠良,薄报学..GaAs半导体表面的等离子氮钝化特性研究[J].发光学报,2016,37(4):428-431,4.基金项目
国家自然科学基金(61176048,61177019,61308051) （61176048,61177019,61308051）
吉林省科技发展计划(20150203007GX,20130206016GX) （20150203007GX,20130206016GX）
中物院高能激光重点实验室基金(2014HEL01)资助项目 （2014HEL01）
