物理学报2016，Vol.65Issue(8)：080701-1-080701-8,8.DOI:10.7498/aps.65.080701
顶栅石墨烯离子敏场效应管的表征及其初步应用∗
Characterization and preliminary application of top-gated graphene ion-sensitive field effect transistors
摘要
Abstract
Graphene, a 2-dimensional material, has received increasing attention due to its unique physicochemical properties (high surface area, excellent conductivity, and high mechanical strength). Field-effect transistor is shown to be a very promising candidate for electrically detecting chemical and biological species. Most of the reports on graphene field-effect transistors show that solution-gated graphene field effect transistors have been used so far. Although the traditional solution-gated graphene field effect transistor has high sensitivity, but the graphene channel is contaminated easily. The stability of the device is reduced so that the device cannot be reused. Only very recently, has the top-gated graphene, which is potentially used for pH sensors, been reported. In the top-gated graphene the dielectrics is deposited at the top of graphene. However, the sensitivity is lower than other sensors. To improve the properties, we design and fabricate a top-gated graphene ion-sensitive field effect transistor by using large-area graphene synthesized by chemical vapor deposition. At the top of graphene, HfO2/Al2O3 thin film is deposited by atomic layer deposition. The Al2O3 film plays a role of sensitive membrane, and the HfO2/Al2O3 thin film protects the graphene from contamination of the solution. After depositing the top-gate, because of the shield of the insulation, the boundary between the graphene and the substrate is not clear. And the Raman spectrum indicates the presence of a defective top layer accompanied by an increase in the Raman D peak. After a series of electrical characterizations, compared with solution-gated graphene field effect transistor which directly contacts the graphene channel with the solution, the top-gated graphene ion-sensitive field effect transistor has a high resistance. This increase relative to uncovered grapheme, is attributed to the participation of the topπ-orbitals in van der Waals bonds to the insulation. The grapheneπ-orbitals contributing to van der Waals bonds have less overlaps and thus result in reduced conductivity. However the output curves and transfer curves show that the top-gated graphene ion-sensitive field effect transistor has higher signal-to-noise ratio and better stability. In view of the biochemical detection, in this paper we also examine the adsorption of single-stranded DNA. Silane functionalization of metal oxide system is a versatile technique that can be used in DNA microarray and nanotechnology. The DNA immobilization process we have developed contains several steps: silanization (APTES), crosslinker attachment (EDC and NHS), reaction with carboxyl-DNA and removal of non-covalently bound DNA. We characterize the process with carboxyl-quantum dots. We also measure the transfer curves before and after the adsorption of DNA, and demonstrate the effectiveness of the functionalized process and the feasibility that the top-gated graphene ion-sensitive field effect transistor is used as the biosensor.关键词
石墨烯/场效应管/HfO2/Al2O3/水基-原子层沉积Key words
grapheme/field effect transistor/HfO2/Al2O3/H2O-based atom layer deposition引用本文复制引用
吴春艳,杜晓薇,周麟,蔡奇,金妍,唐琳,张菡阁,胡国辉,金庆辉..顶栅石墨烯离子敏场效应管的表征及其初步应用∗[J].物理学报,2016,65(8):080701-1-080701-8,8.基金项目
国家高技术研究发展计划(批准号:2014AA06A506)、国家自然科学基金(批准号:61501441,61401442)、中国科学院中德国际合作伙伴团队项目(批准号：GJHZ 1306)、上海市科委项目(批准号:14ZR1447300,15220721700)和上海市教委基础研究重点项目（批准号:14ZZ095）资助的课题.* Project supported by the National High Technology Research and Development Program of China (Grant No.2014AA06A506), the National Natural Science Foundation of China (Grant Nos.61501441,61401442), the Sino-German Program of Cooperation (Grant No. GJHZ 1306), the Project of Shanghai Science and Technology Commission, China (Grant Nos.14ZR1447300,15220721700), and the Innovation Program of Shanghai Municipality Education Commission, China (Grant No.14ZZ095) （批准号:2014AA06A506）
