传感技术学报2016，Vol.29Issue(4)：606-613,8.DOI:10.3969/j.issn.1004-1699.2016.04.023
单晶硅研磨过程的声发射在线监测研究
Research on the Acoustic Emissionin-Process Monitoring of Single-Crystal Silicon Lapping Process
崔涛1
作者信息
- 1. 中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室，长春130033
- 折叠
摘要
Abstract
The acoustic emission(AE)in-process monitoring device of lapping process was developed based on the BIN62 lapping&polishing machine. Firstly,lapping experiments were carried out to investigate the effect of differ⁃ent lapping processing parameters on the RMS of AE signals and material removal rate(MRR). Then,a mathemati⁃cal linear prediction model of MRR and RMS was developed by regression analysis. Finally,the mechanism of AE source in the lapping of single-crystal silicon was investigated by frequency analysis and surface topography obser⁃vation. Results showed that RMS goes up with the increasing of lapping load or lapping speed. MRR can be predict⁃ed based on the measured RMS valueand the erroris less than 4.2%with lapping conditions in the given range. In addition,the mechanism of AE source can be recognized from the features of the AE frequency spectrum. The fre⁃quency peaks in the lapping of single-crystal silicon are distributed in the region from 50 kHz to260 kHz,and AE signals are mainly generated by brittle cleavage,abrasive wear and adhesive wear of material.关键词
研磨/声发射/在线监测/单晶硅/材料去除率Key words
lapping/acoustic emission(AE)/in-process monitoring/single-crystal silicon/material removal rate (MRR)分类
信息技术与安全科学引用本文复制引用
崔涛..单晶硅研磨过程的声发射在线监测研究[J].传感技术学报,2016,29(4):606-613,8.
