发光学报2016，Vol.37Issue(5)：513-518,6.DOI:10.3788/fgxb20163705.0513
高Al组分AlGaN多量子阱结构材料发光机制探讨
Emission Mechanism of High Al-content AlGaN Multiple Quantum Wells
摘要
Abstract
The quantum efficiency of deep UV light emitting diodes ( LED) drops dramatically with the increasing of Al content. Understanding the emission mechanism of high Al-content AlGaN mul-tiple quantum wells ( MQW) is the one of the most important objects for improving the quantum effi-ciency of deep UV LED. In this work, high Al-content AlGaN MQW structure with atomically flat hetero-interfaces was grown and characterized by photoluminescence ( PL) measurements at different temperatures. The results indicate that there is a strong exciton-localization effect in the MQW struc-ture and the emission is closely related to the hopping of the excitons. Due to the exciton delocaliza-tion and nonradiative recombination at defects, the PL intensity is strongly quenched at high temper-atures.关键词
AlGaN/多量子阱结构/深紫外LED/发光机制Key words
AlGaN/MQW/deep UV-LED/emission mechanism分类
数理科学引用本文复制引用
李金钗,季桂林,杨伟煌,金鹏,陈航洋,林伟,李书平,康俊勇..高Al组分AlGaN多量子阱结构材料发光机制探讨[J].发光学报,2016,37(5):513-518,6.基金项目
“973”国家重点基础研究发展计划(2012CB619300) （2012CB619300）
“863”国家高技术研究发展计划(2014AA032608) （2014AA032608）
国家自然科学基金(U1405253,61227009,11204254,11404271) （U1405253,61227009,11204254,11404271）
福建省自然科学基金(2015J01028)资助项目 （2015J01028）
