发光学报2016，Vol.37Issue(5)：556-560,5.DOI:10.3788/fgxb20163705.0556
射频等离子硫钝化GaAs（100）的表面特性
RF Sulfur-plasma Passivation of GaAs(100) Surface
摘要
Abstract
Sulfur-plasma process was proposed to clean and passivate the surface of (100) oriented GaAs wafers for stable sulfur passivation effect. The photoluminescence ( PL) intensity of processed samples with sulfur-plasma had an obvious improvement after 360 ℃ annealing, and 71% higher than the unpassivated sample. The stability of passivation was also tested. There was no obvious PL intensity degradation while the sample stored in open air over a month. The experiment results show that the passivation of GaAs surface treated by sulfur-plasma process has good stability.关键词
射频等离子体/光致发光/钝化/GaAsKey words
RF plasma/PL/passivation/GaAs分类
信息技术与安全科学引用本文复制引用
许留洋,高欣,袁绪泽,夏晓宇,曹曦文,乔忠良,薄报学..射频等离子硫钝化GaAs（100）的表面特性[J].发光学报,2016,37(5):556-560,5.基金项目
国家自然科学基金(61176048,61177019,61308051) （61176048,61177019,61308051）
吉林省科技发展计划(20150203007GX,20130206016GX) （20150203007GX,20130206016GX）
中物院高能激光重点实验室基金(2014HEL01)资助项目 （2014HEL01）
