物理学报2016，Vol.65Issue(5)：90-97,8.DOI:10.7498/aps.65.054201
一种新型Si/SiGe/Si双异质结PIN电学调制结构的异质结能带分析
Analysis of Si/SiGe/Si double heterojunction band of a novelstructure of PIN electronic modulation
摘要
关键词
光电子器件/电光调制器/锗硅/异质结能带Key words
photoelectronic device/electro-optic modulator/SiGe/band of heterojunction引用本文复制引用
冯松,薛斌,李连碧,翟学军,宋立勋,朱长军..一种新型Si/SiGe/Si双异质结PIN电学调制结构的异质结能带分析[J].物理学报,2016,65(5):90-97,8.基金项目
国家自然科学基金(批准号:61204080)、陕西省教育厅科研计划(批准号:15JK1292)、西安工程大学博士科研启动基金(批准号:BS1128,BS1436)、西安工程大学研究生教育“质量工程”项目(批准号:15yzl10)和陕西省普通高校重点学科建设专项资金建设项目(批准号:(2008) 169)资助的课题.Project supported by the National Natural Science Foundation of China (Grant No.61204080),the Shanxi Provincial Higher Education Teaching Reform Project,China (Grant No.15JK1292),the Doctoral Program Foundation of Xi'an Polytechnic University of China (Grant Nos.BS1128,BS1436),the Graduate Education "Quality Project" of Xi'an Polytechnic University of China (Grant No.15yzl10),and the Special Funds of Key Disciplines Construction Project of Ordinary Universities of Shanxi Province,China (Grant No.(2008) 169). （批准号:61204080）
