电子器件2016，Vol.39Issue(3)：505-511,7.DOI:10.3969/j.issn.1005-9490.2016.03.002
4H-SiC基超结器件各向异性的TCAD建模分析
TCAD Modeling of Anisotropy 4H-SiC Superjunction Devices
摘要
Abstract
Based on reported experimental physical properties of anisotropic 4H-SiC,physical models of anisotropic 4H-Silicon carbide(4H-SiC)have been proposed first time for superjunction(SJ)devices. Anisotropic impact ioniza⁃tion is also considered in this model. Using proposed model,we investigated the electrical properties of anisotropic 4H-SiC SJ devices with respect to wafer orientation(0001)and(1120). Compared to the conventional anisotropic 4H-SiC devices,the breakdown voltage(VB)of(1120)SJ devices is increased to72% of(0001)wafer devices from 60%due to the bidirectional electric field profile.关键词
功率器件/超结/4H-SiC/各向异性碰撞电离系数/击穿电压(VB)Key words
power device/superjunction(SJ)/4H-SiC/anisotropic impact ionization coefficient(IIC)/Breakdown Voltage(VB)分类
信息技术与安全科学引用本文复制引用
陆秋俊,王中健..4H-SiC基超结器件各向异性的TCAD建模分析[J].电子器件,2016,39(3):505-511,7.基金项目
江苏省科技厅前瞻性研究项目 （）
