电子器件2016，Vol.39Issue(3)：526-530,5.DOI:10.3969/j.issn.1005-9490.2016.03.006
基于ΔVGS高阶温度补偿的高精度CMOS带隙基准源
A High Precision Bandgap Reference with High-Order Temperature Compensation byΔVGS
陈培腾 1王卫东 1黎官华1
作者信息
- 1. 桂林电子科技大学信息与通信学院，广西桂林541004
- 折叠
摘要
Abstract
The difference in the gate-source voltageΔVGS by two MOS that work in the weak inversion,produces the high-end compensation ,which carries on high-order temperature compensation for the traditional BJT bandgap reference. A high precision bandgap reference with high-order temperature compensation can be designed byΔVGS. And the circuit is designed by using CSMC 0.5 μm standard CMOS process. The simulation shows that:when the supply voltage is 5 V,the output reference voltage is 1.258 V;during the range of temperature-40℃~125℃,the temperature coefficient is 1.24×10-6/℃;the PSRR is-68 dB at low frequency;when the voltage works during 3.5 V~6.5 V,linear regulation is 0.4 mV/V. It is suitable for high precision bandgap voltage reference.关键词
带隙基准(BGR,Bandgap Reference)/亚阈区/低温度系数Key words
bandgap reference/subthreshold/low temperature coefficient分类
信息技术与安全科学引用本文复制引用
陈培腾,王卫东,黎官华..基于ΔVGS高阶温度补偿的高精度CMOS带隙基准源[J].电子器件,2016,39(3):526-530,5.
