电子器件2016，Vol.39Issue(3)：531-534,4.DOI:10.3969/j.issn.1005-9490.2016.03.007
AlGaN/GaN HEMT电容及充电时间的研究
Research on Capacitance and Charging Time of AlGaN/GaN HEMT
摘要
Abstract
The AlGaN/GaN HEMT two-dimensional electron gas of the electric potential,carrier life and modulation doped carrier life were calculated.The AlGaN/GaN HEMT capacitance and charging time were got ,device time response for the AlGaN layer doping concentration and its thickness were studied and the AlGaN/GaN HEMT devices of high frequency characteristics was analysised.Results show that gate capacitance decreases gradually with the increase of doping concentration and thickness of the AlGaN layer.The capacitance charging time reduction first then increases with the increase of doping concentration of AlGaN layer,when doping concentrations reach a minimum at 1.24×1019 cm-3;when the AlGaN doping layer thickness is equal to 7 nm,the capacitance charging time is the shortest.关键词
AlGaN/GaN HEMT/频率/电容充电时间/掺杂浓度/厚度Key words
AlGaN/GaN HEMT/frequency/capacitance charging time/doping concentration/thickness分类
信息技术与安全科学引用本文复制引用
侯斌武,赵红东,夏士超,宋晓敏,卢俏,席瑞媛,李梦宇..AlGaN/GaN HEMT电容及充电时间的研究[J].电子器件,2016,39(3):531-534,4.基金项目
河北省自然科学基金项目 （）
