传感技术学报2016，Vol.29Issue(6)：834-840,7.DOI:10.3969/j.issn.1004-1699.2016.06.008
片上集成光电微能源工艺兼容性及器件特性研究
Research on Process Compatibility and Device Characteristics of Photoelectric Micro-Power Supply Integrated On-Chip
摘要
Abstract
The on-chip integration scheme of photoelectric Micro-power supply based on SOI wafer is proposed through the analysis of the preparation process of component devices for temporary-storage photoelectric Micro-pow⁃er supply system. The main process includes insulation groove etching,ion implantation,and oxidation and so on. The scheme is of good preparation process compatibility. In addition,analysis of device characteristics is made based on on-chip integration scheme. Experimental results show that the conversion efficiency of photoelectric cell is 9.7%. The threshold voltage and reverse breakdown voltage of drain electrode of NMOS field-effect transistor is 0.98V and 31.97V,respectively. The current magnification of NPN transistor is 83 and breakdown voltage between emitter and collector is 12V. All integrated devices meet the system requirements. The integration scheme is of good feasibility.关键词
光电微能源/片上集成/工艺方案/兼容性/器件特性Key words
photoelectric micro-power supply/on-chip integration/process scheme/compatibility/device character-istics分类
信息技术与安全科学引用本文复制引用
肖丽仙,何永泰,刘晋豪,李雷..片上集成光电微能源工艺兼容性及器件特性研究[J].传感技术学报,2016,29(6):834-840,7.基金项目
National Natural Science Foundation of China（61271159）；Education Department Major Project Foundation of Yunnan Province （）
