发光学报2016，Vol.37Issue(6)：711-719,9.DOI:10.3788/fgxb20163706.0711
电荷耦合器件的γ辐照剂量率效应研究
Dose Rate Effects of γIrradiation on CCDs
摘要
Abstract
The experiments of dose rate on charge coupled devices( CCDs) were carried out to in-vestigate the relationship between the dose rate and the electrical parameters of the device, and the degradation mechanism was analyzed. With the accumulation of the dose, the dark signal ( DS) and dark non-uniformly signal ( DNS ) increase significantly, and the both charge transfer efficiency ( CTE) and saturation output voltage( SOV) tend to decrease slowly. The whole dark pixel value up-lifts and the non-uniform between pixels becomes obviously. The dark signal of the CCD is negative-ly correlated with the dose rate, and the device presents the potential of the-low-dose-rate-damage enhancement effect. It is considered that the dose rate effect is caused by the competition between the interface states and oxide traps, and the mechanism is explained by the electron-hole pair recom-bination model and the damage model in the annealing process.关键词
电荷耦合器件/暗信号/低剂量率损伤增强效应/暗场像素统计Key words
charge coupled device/dark signal/enhanced low-dosed rate sensitivity/dark pixel statistics分类
信息技术与安全科学引用本文复制引用
武大猷,文林,汪朝敏,何承发,郭旗,李豫东,曾俊哲,汪波,刘元..电荷耦合器件的γ辐照剂量率效应研究[J].发光学报,2016,37(6):711-719,9.基金项目
国家自然科学基金(11005152) （11005152）
中国科学院“西部之光”人才培养计划重点项目“CCD的空间位移损伤效应及评估技术研究”资助 （）
