太赫兹科学与电子信息学报2016，Vol.14Issue(3)：340-343,4.DOI:10.11805/TKYDA201603.0340
雪崩模式下的体结构GaAs光导开关
GaAs bulk PCSS under avalanche mode
摘要
Abstract
By using laser diode with low energy to trigger GaAs Photoconductive Semiconductor Switch (PCSS) at high bias voltage, which makes GaAs PCSS working under avalanche mode, fast pulse voltage is produced. GaAs PCSS is designed as vertical bulk structure with 2mm thickness. The electrodes are of round and doughnut configuration and the trigger light passes through the center of doughnut electrode. The fast pulse is achieved by coaxial Blumlein pulse form line. The simulation and experiment of coaxial Blumlein pulse form line based on GaAs PCSS is executed. When charge voltage exceeds 8kV(40kV/cm), the output voltage impulse increases rapidly and the rise time is shorter than that of laser impulse, which indicates PCSS turns into avalanche mode. When bias voltage is up to 15kV(75kV/cm), 11kV voltage pulse is obtained under 50Ω of load, which accords well with the simulation result. The switch jitter is tested, and the results show that the switch bias voltage has great influence on the switch jitter. As the switch bias voltage increases, the switch jitter decreases. When the bias voltage reaches 15kV, the lowest jitter of 700ps is obtained.关键词
砷化镓/光导开关/雪崩/半导体二极管Key words
GaAs/Photoconductive Semiconductor Switch/avalanche/semiconductor diode分类
信息技术与安全科学引用本文复制引用
吴朝阳,范昭奇,陆巍,杨周炳,罗剑波..雪崩模式下的体结构GaAs光导开关[J].太赫兹科学与电子信息学报,2016,14(3):340-343,4.基金项目
高功率微波技术重点实验室资助项目(2014HPM-01) （2014HPM-01）
