液晶与显示2016，Vol.31Issue(6)：532-539,8.DOI:10.3788/YJYXS20163106.0532
原子层沉积方法制备低温多层Al2 O3/TiO2复合封装薄膜的研究
Low-temperature multi-layer Al2 O3/TiO2 composite encapsulation thin film by atomic layer deposition
摘要
Abstract
Atomic layer deposition (ALD)is considered as one of the most promising thin-film encap-sulation technologies for flexible organic light-emitting diode (OLED)device because of high-quality films formed.In this work,different laminated structures of Al2 O3/TiO2 composite film were pre-pared at low temperature (80 ℃)by ALD method.The growth mechanism of Al2 O3 and TiO2 film was studied.The water vapor barrier properties of the different stacked structures of composite Al2 O3/TiO2 thin film were studied by the calcium film,which were analyzed by water vapor transmission rate <br> (WVTR)test and contact angle measurements.The WVTR of the 5 nm/5 nm×8 dyads Al2 O3/TiO2 composite thin film was 2.1×10-5 g/m2/day and the OLED devices encapsulated by this optimized Al2 O3/TiO2 structure exhibited better lifetime characteristics in high temperature and high humidity test.关键词
有机电致发光器件/薄膜封装/原子层沉积/水汽透过率Key words
organic electroluminescent devices/thin film encapsulation/atomic layer deposition/water vapor transmission rate分类
信息技术与安全科学引用本文复制引用
周忠伟,李民,徐苗,邹建华,王磊,彭俊彪..原子层沉积方法制备低温多层Al2 O3/TiO2复合封装薄膜的研究[J].液晶与显示,2016,31(6):532-539,8.基金项目
深圳市技术攻关计划(No．JSGG20150331171053333) （No．JSGG20150331171053333）
广州市平板显示行业工程技术研究中心资助项目(No．2060502) （No．2060502）
