液晶与显示2016，Vol.31Issue(6)：558-562,5.DOI:10.3788/YJYXS20163106.0558
氧分压对铟镓锌氧薄膜晶体管性能影响
Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor
孙建明 1周婷婷 1任庆荣 1胡合合 1陈宁 1宁策 1王路 1刘文渠 1李东升1
作者信息
- 1. 京东方科技集团股份有限公司，北京 100176
- 折叠
摘要
Abstract
Indium gallium zinc oxide thin film transistors (IGZO-TFT)were fabricated with the stand-ard process of TFT-LCD arrays substrate.The effects of different oxygen partial pressure on IGZO-TFT performance were investigated by adj usting the oxygen partial pressure in IGZO film process.All devices showed good electrical properties.The threshold voltage of TFT was increased from 0.5 V to 2.2 V as the oxygen partial pressure was increased from 10% to 50%,whereas the sub-threshold swing had not changed.Applying a positive gate bias of 30 V for 3 600 s,with the increase of the oxy-gen partial pressure,the positive shift of threshold voltage of IGZO-TFT was increased from 1 V to 9 V.The carrier concentration in TFT with higher oxygen partial pressure is lower.So it requires high-er gate voltage for building the channel with the same conductive capability,and therefore the thresh-old voltage will be higher.In the Metal-Insulator-Semiconductor (MIS)structure,the lower carrier concentration leads electron accumulation layer to be thicker.There will be more energy states in band bending part of active layer which are the same as electron traps of gate insulator (GI).Consequently, it is possible that more electrons are captured by GI,and shift of threshold voltage will be greater.关键词
铟镓锌氧薄膜晶体管/氧分压/阈值电压漂移/电子积累层Key words
indium gallium zinc oxide thin film transistor/oxygen partial pressure/shift of threshold voltage/electron accumulation layer分类
信息技术与安全科学引用本文复制引用
孙建明,周婷婷,任庆荣,胡合合,陈宁,宁策,王路,刘文渠,李东升..氧分压对铟镓锌氧薄膜晶体管性能影响[J].液晶与显示,2016,31(6):558-562,5.
