首页|期刊导航|半导体学报（英文版）|A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low power applications
A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low power applicationsOACSCDCSTPCD
A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low power applications
Pranav Kumar Asthana;Yogesh Goswami;Bahniman Ghosh
Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, IndiaDepartment of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, IndiaDepartment of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India
band-to-band tunneling (BTBT)tunnel field effect transistor (TFET)junctionless tunnel field effect transistor (JLTFET)ION/IOFF ratiolow power
band-to-band tunneling (BTBT)tunnel field effect transistor (TFET)junctionless tunnel field effect transistor (JLTFET)ION/IOFF ratiolow power
《半导体学报（英文版）》 2016 (5)
30-34,5
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