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Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors

Cao Chen Zhang Bing Wang Junfeng Wu Longsheng

半导体学报（英文版）2016，Vol.37Issue(5)：56-60,5.

半导体学报（英文版）2016，Vol.37Issue(5)：56-60,5.DOI:10.1088/1674-4926/37/5/054007

Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors

Cao Chen ¹Zhang Bing ¹Wang Junfeng ¹Wu Longsheng¹

作者信息

1. Xi'an Microelectronics Technology Institute, Xi'an 710071, China
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摘要

关键词

CMOS image sensors (CIS)/pinned photodiode (PPD)/charge transfer potential barrier (CTPB)/photoresponse curve

Key words

CMOS image sensors (CIS)/pinned photodiode (PPD)/charge transfer potential barrier (CTPB)/photoresponse curve

引用本文复制引用

Cao Chen,Zhang Bing,Wang Junfeng,Wu Longsheng..Measurement of charge transfer potential barrier in pinned photodiode CMOS image sensors[J].半导体学报（英文版）,2016,37(5):56-60,5.

基金项目

Project supported by the National Defense Pre-Research Foundation of China (No.51311050301095). （No.51311050301095）

半导体学报（英文版）

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ISSN：1674-4926

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