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Endurance characteristics of phase change memory cells

Huo Ruru Cai Daolin Bomy Chen Chen Yifeng Wang Yuchan Wang Yueqing Wei Hongyang

半导体学报（英文版）2016，Vol.37Issue(5)：65-68,4.

半导体学报（英文版）2016，Vol.37Issue(5)：65-68,4.DOI:10.1088/1674-4926/37/5/054009

Endurance characteristics of phase change memory cells

Huo Ruru ¹Cai Daolin ²Bomy Chen ¹Chen Yifeng ¹Wang Yuchan ¹Wang Yueqing ¹Wei Hongyang¹

作者信息

1. Shanghai Institute of Micro-System and Information Technology, Shanghai 200050, China
2. Shanghai Tech University, Shanghai 200031, China
折叠

摘要

关键词

phase change memory/endurance, compositional change/threshold voltage

Key words

phase change memory/endurance, compositional change/threshold voltage

引用本文复制引用

Huo Ruru,Cai Daolin,Bomy Chen,Chen Yifeng,Wang Yuchan,Wang Yueqing,Wei Hongyang..Endurance characteristics of phase change memory cells[J].半导体学报（英文版）,2016,37(5):65-68,4.

基金项目

Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences (No.XDA09020402), the National Key Basic Research Program of China (Nos.2013CBA01900, 2010CB934300, 2011CBA00607, 2011CB932804), the National Integrate Circuit Research Program of China (No.2009ZX02023-003), the National Natural Science Foundation of China (No.61176122, 61106001,61261160500, 61376006), and the Science and Technology Council of Shanghai (Nos.12nm0503701, 13DZ2295700, 12QA1403900,13ZR1447200, 14ZR1447500). （No.XDA09020402）

半导体学报（英文版）

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ISSN：1674-4926

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