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DOIND: a technique for leakage reduction in nanoscale domino logic circuits

Ambika Prasad Shah Vaibhav Neema Shreeniwas Daulatabad

半导体学报(英文版)2016,Vol.37Issue(5):69-77,9.
半导体学报(英文版)2016,Vol.37Issue(5):69-77,9.DOI:10.1088/1674-4926/37/5/055001

DOIND: a technique for leakage reduction in nanoscale domino logic circuits

DOIND: a technique for leakage reduction in nanoscale domino logic circuits

Ambika Prasad Shah 1Vaibhav Neema 1Shreeniwas Daulatabad2

作者信息

  • 1. Electronics & Telecommunication Engineering Department, IET-Devi Ahilya University, Indore-452017, India
  • 2. Electrical Engineering Department, Indian Institute of Technology, Bombay-400076, India
  • 折叠

摘要

关键词

deep submicron/DOIND logic/domino logic/evaluation/precharge/subthreshold leakage

Key words

deep submicron/DOIND logic/domino logic/evaluation/precharge/subthreshold leakage

引用本文复制引用

Ambika Prasad Shah,Vaibhav Neema,Shreeniwas Daulatabad..DOIND: a technique for leakage reduction in nanoscale domino logic circuits[J].半导体学报(英文版),2016,37(5):69-77,9.

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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