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Researching the silicon direct wafer bonding with interfacial SiO2 layer

Wang Xiaoqing Yu Yude Ning Jin

半导体学报（英文版）2016，Vol.37Issue(5)：121-124,4.

半导体学报（英文版）2016，Vol.37Issue(5)：121-124,4.DOI:10.1088/1674-4926/37/5/056001

Researching the silicon direct wafer bonding with interfacial SiO2 layer

Wang Xiaoqing ¹Yu Yude ¹Ning Jin¹

作者信息

1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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摘要

关键词

wafer direct bonding/surface roughness/bonding strength

Key words

wafer direct bonding/surface roughness/bonding strength

引用本文复制引用

Wang Xiaoqing,Yu Yude,Ning Jin..Researching the silicon direct wafer bonding with interfacial SiO2 layer[J].半导体学报（英文版）,2016,37(5):121-124,4.

基金项目

Project supported by the Key Program of the National Natural Science Foundation of China (No.61334008) and the National Natural Science Foundation of China (No.61376072). （No.61334008）

半导体学报（英文版）

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ISSN：1674-4926

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