首页|期刊导航|半导体学报(英文版)|Researching the silicon direct wafer bonding with interfacial SiO2 layer

Researching the silicon direct wafer bonding with interfacial SiO2 layerOACSCDCSTPCD

Researching the silicon direct wafer bonding with interfacial SiO2 layer

Wang Xiaoqing;Yu Yude;Ning Jin

State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaState Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

wafer direct bondingsurface roughnessbonding strength

wafer direct bondingsurface roughnessbonding strength

《半导体学报(英文版)》 2016 (5)

121-124,4

Project supported by the Key Program of the National Natural Science Foundation of China (No.61334008) and the National Natural Science Foundation of China (No.61376072).

10.1088/1674-4926/37/5/056001

评论

您当前未登录!去登录点击加载更多...