原子能科学技术Issue(9)：1637-1641,5.DOI:10.7538/yzk.2013.47.09.1637
体硅CMOS电路瞬时电离辐射下的自洽防闩锁机理分析
Analysis of Auto-feed-back Preventing Latch-up Mechanism in Bulk CMOS Devices Exposed to Transient Ionizing Irradiation
李瑞宾 1陈伟 1林东生 1杨善潮 1王桂珍1
作者信息
- 1. 西北核技术研究所,陕西 西安,710024
- 折叠
摘要
Abstract
Bulk complementary metal-oxide-semiconductor (CMOS) integrated circuits contain the parasitic silicon-controlled-rectifier (SCR) structure ,which tend to latch-up ,even burn out ,when they are exposed to transient gamma irradiation .Therefore ,it is significant to study latch-up prevention . The continuity equation based on the minority carrier in parasitic transistors was solved ,the duration of photocurrent in the SCR structure was calculated , and the condition of auto-feed-back preventing the devices’ latch-up was confirmed .Moreover ,the relationship of the condition and dose rate was concluded .Two kinds of circuits which were SCR’s equivalent circuit and CMOS circuit were irradiated by transient gamma rays .The experimental results match the theoretical results well .关键词
瞬时辐射/闩锁/剂量率/CMOS集成电路Key words
transient radiation/latch-up/dose rate/CMOS integrated circuit分类
信息技术与安全科学引用本文复制引用
李瑞宾,陈伟,林东生,杨善潮,王桂珍..体硅CMOS电路瞬时电离辐射下的自洽防闩锁机理分析[J].原子能科学技术,2013,(9):1637-1641,5.
