中国光学Issue(5)：710-717,8.DOI:10.3788/CO.20130605.0710
自旋密度光栅和本征 GaAs 量子阱中的电子自旋双极扩散
Spin concentration grating and electron spin ambipolar diffusion in intrinsic GaAs multiple quantum wells
摘要
Abstract
In order to research the effect of holes on the spin electron diffusion , a method of resonant spin am-plication called“Spin Concentration Grating(SCG)” is adopt to observe the process of electron spin diffusion . Transient spin grating and spin concentration grating excited by femtosecond laser beams are used to investigate electron spin diffusion and “electron spin ambipolar diffusion” in intrinsic GaAs multiple quantum wells .The measured coefficient of “electron spin ambipolar diffusion” Das =25.4 cm 2? s-1 is lower than that of electron spin diffusion Ds=113.0 cm 2? s-1 , which indicates that the influence of holes on electron spin diffusion in spin concentration grating is notable .关键词
自旋密度光栅/GaAs量子阱/电子自旋双极扩散/飞秒激光Key words
spin concentration grating/GaAs quantum well/electron spin ambipolar diffusion/fs laser分类
数理科学引用本文复制引用
余华梁,陈曦矅,狄俊安..自旋密度光栅和本征 GaAs 量子阱中的电子自旋双极扩散[J].中国光学,2013,(5):710-717,8.基金项目
Specialized Scientific Research Fundation of Higher Education Institution of Fujian Province ， China （ No． JK2011039）；Natural Science Foundation of Fujian Province of China （）
