硅酸盐学报2016，Vol.44Issue(7)：981-986,6.DOI:10.14062/j.issn.0454-5648.2016.07.11
退火温度对GaN：Mn薄膜微结构、电学及磁学性能的影响
Effects of Annealing Temperature on Microstructure, Electronic and Magnetic Properties of GaN:Mn films
摘要
Abstract
GaN:Mn thin films were preparedvia implanting Mn ions into undoped GaN epilayers. The effect of annealing temperature on the microstructure, electronic and magnetic properties of the thin films was investigated. The results show that all the annealed samples have a single crystalline wurtzite structure without secondary phases. The new phonon modes in the GaN:Mn films are attributed to the vibrational mode of defects caused by the Mn ions implantation and Mn related local vibrational mode in the vicinity ofE2high. The GaN:Mn films exhibit room-temperature ferromagnetism, and their magnetic and electrical properties change with the annealing temperature. Analysis reveals that the alteration of material microstructure with post-annealing temperatures led to the variation of the magnetic exchange interaction, which made the ferromagnetism of this material system vary with post-annealing temperature.关键词
锰掺杂氮化镓/微结构/铁磁性/磁交换相互作用Key words
manganese-doped gallium nitride/microstructure/ferromagnetism/magnetic exchange interaction分类
数理科学引用本文复制引用
徐大庆,李培咸,娄永乐,李妤晨..退火温度对GaN：Mn薄膜微结构、电学及磁学性能的影响[J].硅酸盐学报,2016,44(7):981-986,6.基金项目
陕西省教育厅专项科研计划项目(11JK0912)；西安科技大学科研培育基金项目(2010011)；西安科技大学博士启动基金项目(2010QDJ029)；国防预研究基金(9140A08040410DZ106)；中央高校基本科研业务费专项资金(JY10000925005)资助。 （11JK0912）
