硅酸盐学报2016，Vol.44Issue(7)：987-994,8.DOI:10.14062/j.issn.0454-5648.2016.07.12
直流磁控溅射工艺对ITO薄膜光电性能的影响
Effect of DC Magnetron Sputtering Process on Optical and Electrical Properties of ITO Thin Films
摘要
Abstract
The indium tin oxide (ITO) thin films were deposited on glass substrates in DC magnetron sputtering system. The effects of post-annealingversusin-situheating, substrate temperatures and DC power on the structural, morphological, electrical and optical properties of ITO thin films were investigated by X-ray diffraction scanning electronic microscopy, UV-Vis spectrophotometry and Hall effect analysis, respectively. The results show that the better electrical and optical properties of the ITO film preparedin situ at a substrate temperature of 410℃ are obtained, compared to the sample prepared at room temperature and annealed in air at 410℃. The resistivity of the ITO films monotonically decreases and the cut-off wavelength exhibits an obvious blue shift. The optimum electrical and optical properties of ITO films deposited are achieved when the substrate temperature and sputtering power is 580℃ and 85 W. The ITO thin films with a minimum resistivity of 1.4×10‒4Ω·cm and a maximum mean visible transmittance of 93% can be prepared under the optimized process condition.关键词
直流磁控溅射/氧化铟锡薄膜/衬底温度/溅射功率Key words
DC magnetron sputtering/indium tin oxide films/substrate temperature/sputtering power分类
通用工业技术引用本文复制引用
彭寿,王芸,蒋继文,李刚,张宽翔,杨勇,姚婷婷,金克武,曹欣,徐根保..直流磁控溅射工艺对ITO薄膜光电性能的影响[J].硅酸盐学报,2016,44(7):987-994,8.基金项目
安徽省科技攻关计划项目(1301021015)资助。 （1301021015）
