物理学报2016，Vol.65Issue(13)：134204-1-134204-9,9.DOI:10.7498/aps.65.134204
894 nm高温垂直腔面发射激光器及其芯片级铯原子钟系统的应用∗
894 nm high temp erature op erating vertical-cavity surface-emitting laser and its application in Cs chip-scale atomic-clo ck system
摘要
Abstract
In this study, an 894 nm high temperature vertical-cavity surface-emitting laser (VCSEL) is reported. Furthermore, a Cs chip-scale atomic clock (CSAC) system experiment based on this VCSEL is carried out. To achieve low threshold/power consumption under high temperature condition, the VCSEL epitaxial structure is optimized. Especially, the so-called gain cavity-mode detuning technology is utilized to improve the temperature sensitivity of the device output characteristics. The relationship between the structure of quantum well and the gain is simulated by using the commercial software PICS3D. In order to achieve high gain and low threshold properties, the thickness of the quantum well is optimized. Based on the theory of transmission matrix, the VCSEL cavity mode (etalon) is calculated. Finally, a−15 nm quantum well gain-cavity mode offset is utilized to achieve relatively stable cavity mode gain, which can guarantee the temperature-insensitivity of the VCSEL output characteristics. The output performance of the VCSEL device we fabricated is investigated experimentally. The VCSEL light-current (L-I) characteristic is tested under different temperatures. It is found that benefiting from the gain-cavity mode offset design, the threshold can be maintained at 0.20–0.23 mA when the temperature increases from 20 ◦C to 90 ◦C. Meantime, the output power of more than 100 µW is achieved at different temperature levels. By comparing with the results at room temperature, No dramatic degradation of the VCSEL high temperature L-I characteristics is found, which means that the VCSEL output characteristic is relatively temperature-insensitive. The wavelength of the VCSEL is 890.4 nm at a temperature of 20 ◦C. When the temperature increases up to 85.6 ◦C, the VCSEL wavelength is red-shifted to 894.6 nm (Cs D1 line), corresponding to a red shift ratio of 0.064 nm/◦C. According to the polarization requirement of CSAC applications, the polarization properties of the VCSEL are studied and the results are as follows: under an injected current of 1 mA and operation temperature of 20 ◦C, Pmax = 278.2 µW and Pmin = 5.9 µW, corresponding to a polarization ratio of 47:1; at a temperature of 85.6 ◦C, Pmax =239.2 µW and Pmin =4 µW, corresponding to a polarization ratio of 59.8:1.Using the VCSEL reported in this paper as a laser source, the CSAC experiment is carried out. At 4.596 GHz of modulated frequency, the output laser of the VCSEL is collimated and interacts with Cs atoms. Finally the closed-loop frequency locking atomic clock is demonstrated. The Cs laser absorption spectrum for laser frequency stabilization, as well as the CPT signal for Cs CSAC microwave frequency stabilization is obtained.关键词
垂直腔面发射激光器/芯片级原子钟/高温/相干布居囚禁Key words
vertical-cavity surface-emitting laser/Cs chip-scale atomic clock/high temperature/coherent population trapping引用本文复制引用
张星,张奕,张建伟,张建,钟础宇,黄佑文,宁永强,顾思洪,王立军..894 nm高温垂直腔面发射激光器及其芯片级铯原子钟系统的应用∗[J].物理学报,2016,65(13):134204-1-134204-9,9.基金项目
国家自然科学基金(批准号:61434005,61474118,11304362)、国家科技重大专项(批准号:2014ZX04001151)、吉林省科技发展计划项目(批准号:20150203011GX,20140101203JC)和长春市科技计划项目(批准号:14KG006,15SS02,13KG22)资助的课题.* Project supported by the National Natural Science Foundation of China (Grant Nos.61434005,61474118,11304362), the National Science and Technology Major Project of the Ministry of Industry and Information Technology of China (Grant No.2014ZX04001151), the Jilin Scientific and Technological Development Program, China (Grant Nos.20150203011GX,20140101203JC), and the Changchun Science and Technology Project, China (Grant Nos.14KG006,15SS02,13KG22) （批准号:61434005,61474118,11304362）
